This section lists the process change notices for Central Semiconductor devices.
Please note that Central Semiconductor complies with JEDEC standard JESD46: Customer Notification of Product/Process Changes by Solid-State Suppliers.
Lack of acknowledgement of a PCN within 30 days constitutes acceptance of the change.
To automatically receive Process Change Notices (PCN) you must be registered to my.centralsemi and subscribed to PCN/EOL Notifications. Click here to register or update your registration.
Search Term:
PCN#
PDF
Excel
Final/Initial
Notification Date
Extent of change
PCN259
Final
20 November 2024
Change in lead frame for all devices manufactured in the DPAK case.
PCN258
Final
29 October 2024
Additional assembly site being added for all Switching, Schottky, and Zener diodes manufactured in the SOT-23 case.
PCN256
Final
25 July 2024
Enhancements have been made to wafer processing to improve yields.The backside wet etch has been changed from a manual to automated process.
PCN255
Final
23 July 2024
Change in plating facility for all devices manufactured in the TO-72case as well as the 2N5116.
PCN251
Final
17 June 2024
Additional assembly site being added for all Small Signal Transistors manufactured in the SOT-23 case.
PCN229
Final
18 March 2024
Complementary wafer processes CP230 and CP630 have been discontinued and are being replaced with wafer processes CP260 and CP660, respectively.
PCN254
Final
11 March 2024
Change in wafer fab and die size for the CBRDFSH2-40 Schottky bridgerectifier.
PCN253
Final
11 March 2024
Change in wafer fab and die size for the CBRDFSH1-40 Schottky bridgerectifier.
PCN252
Final
11 March 2024
Change in wafer fab and die size for the CBRDFSH2-100 Schottky bridge rectifier.
PCN250
Final
11 March 2024
Change in wafer fab and die size for the CBRDFSH1-60 Schottky bridgerectifier.
PCN249
Final
11 March 2024
Change in wafer fab and die size for the CBRDFSH2-60 Schottky bridgerectifier.
PCN247
Final
19 June 2023
Additional wafer fab site for specified transistors manufactured in the SOT-323 case.
PCN243
Final
25 May 2023
The CPZ28X wafer process has been discontinued and replaced with theCPZ58X and CPZ59X wafer processes. This change results in an increase in wafer diameter from 5" to 6", as well as enhanced metallization. Rev:001 of PCN#243, May 25,2023, issued to add the CMPZDC15V to the list of affected part numbers.
PCN246
Final
14 March 2023
Change in wafer fab and die size for the CBRDFSH1-100 Schottky bridge rectifier.
PCN244
Final
9 December 2022
Change in internal lead frame for custom devices manufactured in theTLM1053 case.
PCN245
Final
3 November 2022
Additional assembly site for general purpose rectifiers in the SMAcase.
PCN242
Final
4 October 2022
Additional assembly site, internal die size optimization, and internallead frame modification for the CEN1151A Schottky Bridge Rectifier.
PCN236
Final
4 October 2022
Change in wafer fab and die size for specific P-Channel JFETs.
PCN241
Final
22 September 2022
Additional lead frame supplier for all devices manufactured in theSOD-882L package.
PCN240
Final
8 September 2022
Additional assembly site for the CMPT5179, CMPT918 and CEN1056A RFtransistors.
PCN237
Initial
25 July 2022
Change in assembly/test site and die size for the 2N6052 powertransistor.
PCN238
Initial
21 July 2022
Change in die size for the TIP112 power transistor.
PCN239
Final
30 June 2022
Additional plating facility for all devices manufactured in the TO-72 case.
PCN235
Final
28 April 2022
The diameter of the CP710V wafer process has changed from 5" to 6". This change does not affect the physical or electrical characteristicsof any device. Gross die quantities per wafer have been increased.
PCN233
Final
25 April 2022
Change in internal lead frame for all products manufactured in theSMA case.
PCN232
Final
7 April 2022
Change in internal lead frame for all products manufactured in theSMB case.
PCN231
Final
28 March 2022
Change in internal lead frame for all products manufactured in the SMCcase.
PCN230
Final
18 March 2022
The CPD102X wafer process has been discontinued and replaced with the CPD51V wafer process.
PCN203
Final
12 November 2021
Change in wire bond material for all products manufactured in the SOIC-8 case.
PCN228
Final
22 September 2021
Additional assembly site being added for all Schottky bridge rectifiers manufactured in the HDDIP case.
PCN227
Final
12 August 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN226
Final
17 June 2021
Change in wafer fab and die size for MJ11013 and MJ11014power transistors.
PCN225
Final
17 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN221
Final
17 June 2021
The CP209 wafer process has been discontinued and is being replaced with the CP264V wafer process.
PCN224
Final
14 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN223
Final
14 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN222
Final
14 June 2021
Change in wafer fab and die size for 2N3442 NPN power transistor.
PCN214
Final
7 June 2021
Additional assembly site for diodes, rectifiers and TVSs in case 106, DO-15, DO-201, DO-201AD and DO-41 cases.
PCN202
Final
4 June 2021
The CP216 wafer process has been discontinued and replaced with the CP226V wafer process.
PCN220
Final
2 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN219
Final
2 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN218
Final
2 June 2021
Change in wafer fab and die size for specific NPN power transistors.
PCN217
Final
2 June 2021
Change in wafer fab and die size for specific PNP power transistors.
PCN215
Final
1 June 2021
A new plating SCP has been qualified for the CPC14-SIC10-1200-CT.
PCN212
Final
25 May 2021
Additional wafer fab site for Zener diodes manufactured in the DO-201 case.
PCN213
Final
24 May 2021
New standard 7" reel taping option; existing 13" reel taping option is now special order; quantity per 13" reel increased to 10,000
PCN210
Final
9 April 2021
Change in wafer fab and die size for specific PNP power transistors.
PCN211
Final
19 March 2021
Change in assembly site and die attach method for CZDM8502N MOSFET.
PCN209
Final
2 March 2021
Additional assembly site for all devices manufactured in the SOD-923case.
PCN207
Final
2 March 2021
Change in die attach method for specific SOT-223 transistors.
PCN205
Final
16 February 2021
Additional wafer fab site for Schottky rectifiers manufactured in SMA, SMB and SMC cases.
PCN199
Final
16 February 2021
Change in wafer fab site and anode pad size for the CPD22 wafer process for 1A, 1000V rectifiers.
PCN208
Final
2 February 2021
Additional assembly site for CMKD6263 Schottky diode.
PCN197
Final
15 January 2021
Change in assembly site for diodes and transistors manufactured in the SOT-26 case; and change in die attach method from eutectic to silver epoxy.
PCN204
Final
14 January 2021
Change in wafer fab site for CMDD4448 and CMOD4448 silicon switching diodes in the SOD-323 and SOD-523 case, respectively.
PCN206
Final
11 January 2021
Additional wafer fab site for low voltage range of transient voltage suppressors (TVS) manufactured in the SOD-123F case.
PCN201
Final
21 October 2020
The diameter of the gold wire used in the the CMXTVS5-4 transient voltage suppressor (TVS) assembly process is changing from 1.0 mil to 0.8 mil.
PCN195
Final
30 September 2020
Additional wafer fab site for silicon controlled rectifiers (SCRs) manufactured in the TO-39 case.
PCN198
Final
28 September 2020
Change in wafer fab for the 2N6059 NPN power darlington transistor.
PCN196
Final
24 September 2020
Change in internal lead frame for all products manufactured in the SMAFL case.
PCN194
Final
29 July 2020
Additional wafer fab site for transient voltage suppressors (TVS) manufactured in the SMAFL case.
PCN193
Final
29 July 2020
Additional wafer fab site for fast, hyperfast, superfast and ultrafast recovery rectifiers manufactured in DO-41, DPAK, D2PAK, SMA, SMAFL, SMB, SMC and SOD-123FL cases.
PCN192
Final
29 July 2020
Additional wafer fab site for general purpose rectifiers manufactured in SMA, SMB, DIP and SMDIP cases.
PCN187
Final
23 July 2020
The CP372 wafer process has been discontinued and replaced with the CP403 wafer process.
PCN191
Final
19 June 2020
The CP771 wafer process has been discontinued and replaced with the CP805 wafer process.
PCN190
Final
19 June 2020
The CP375 wafer process has been discontinued and replaced with the CP406 wafer process.
PCN189
Final
19 June 2020
The CP371 wafer process has been discontinued and replaced with the CP405 wafer process.
PCN188
Final
15 June 2020
Additional wafer fab site for 5A ultrafast recovery rectifiers manufactured in the SMC case.
PCN186
Final
12 June 2020
The CP775 wafer process has been discontinued and replaced with the CP802 wafer process.
PCN185
Final
1 June 2020
The equipment used to apply glass slurry to the CPR5U-040 glass passivated ultra fast recover rectifier has been upgraded, and enhancements have been made to the wafer process.
PCN184
Final
29 May 2020
Additional wafer fabrication site for TVS diodes manufactured in the SMC case.
PCN183
Final
18 May 2020
The CP390 wafer process has been discontinued and replaced with the CP401
PCN181
Final
28 April 2020
Specific TO-92 products are being converted from a eutectic die attach process to an epoxy die attach process.
PCN182
Final
27 April 2020
The CP389 wafer process has been discontinued and replaced with the CP400 wafer process.
PCN180
Final
4 February 2020
Additional wafer fab site for transient voltage suppressors (TVS) manufactured in the SOD-123F case.
PCN179
Final
13 January 2020
The CP307V wafer process has been discontinued and replaced with CP327V wafer process.
PCN178
Final
2 January 2020
Additional wafer fab site for general purpose and ultrafast recovery rectifiers manufactured in the SMA, SMAFL, SMB, SMC, and DO-201 cases.
PCN177
Final
30 September 2019
The CP312 wafer process has been discontinued and replaced with the CP322 wafer process.
PCN174
Final
27 September 2019
The CP210 wafer process has been discontinued and replaced with the CP232V wafer process
PCN165
Final
27 September 2019
The CP206 wafer process has been discontinued and replaced with the CP216 wafer process.
PCN176
Final
27 August 2019
The CPD66X process has been modified in order to improve throughput and process control
PCN175
Final
14 August 2019
The CP147 wafer process has been discontinued and replaced with the CP247 wafer process.
PCN173
Final
11 June 2019
The chip size for the NPN power transistor wafer process has changed from 1.5mm x 1.5mm to 1.37mm x 1.37mm.
PCN172
Final
21 May 2019
The CP688 wafer has been discontinued and replaced with the CP613V wafer process.
PCN171
Final
24 April 2019
The CP391 wafer process has been discontinued and replaced with the CP399 wafer process
PCN170
Final
22 April 2019
The CP773 wafer process is being replaced with the CP798X.
PCN168
Final
22 April 2019
The CP376X wafer process is being replaced with the CP387X.
PCN167
Final
8 April 2019
The CP373 wafer process has been discontinued and replaced with the CP398X wafer process.
PCN164
Final
27 March 2018
Additional wafer fab site for 350mW Zener diodes manufactured in the SOT-23 case.
PCN163
Final
23 March 2018
Additional wafer fab site for Zener diodes manufactured in the SMA, SMB, SMC, DO-41 and DO-201 cases.
PCN158
Final
13 December 2017
Change in the die attach pad size for Schottky and ultra-fast recovery rectifiers manufactured in the D2PAK case.
PCN162
Final
8 December 2017
The CP305 wafer process has been discontinued and replaced with the CP306V wafer process.
PCN161
Final
15 August 2017
Change in wafer fab site for the CSMF05C series TVS Zener array manufactured in the SOT-363 case.
PCN160
Final
15 August 2017
Leadframe structure change for CBRHD-02 series bridge rectifiers.
PCN159
Final
15 August 2017
Change in wafer fab for CMPD914 switching diode.
PCN157
Final
12 January 2017
The CPS041 wafer process has been discontinued and replaced with the CPS043 wafer process.
PCN156
Final
3 March 2016
The CP319 wafer process has been discontinued and replaced with the CP212 wafer process.
PCN154
Final
13 August 2015
Thermal oxide deposition was deployed underneath the original oxide for the 3KW transient voltage suppressors (TVS) in the SMC case.
PCN153
Final
4 May 2015
The CP547 wafer process has been discontinued and replaced with the CP647 wafer process; the overall wafer diameter is being reduced from 5 inch to 4 inch; and the die size and pattern are being changed.
PCN152
Final
30 January 2015
The CP707 wafer process has been discontinued and replaced with the CP727V wafer process; the overall wafer diameter is being increased from 4 inch to 5 inch; the overall wafer thickness is being reduced from 9.0 mils to 7.1 mils; the backside metallization (Au) has been reduced; and the die size and die pattern are being changed.
PCN150
Final
24 June 2014
The CP517 wafer process has been discontinued and replaced with the CP527 wafer process; the overall wafer diameter is being reduced from 5 inch to 4 inch; and the die pattern is being changed.
PCN151
Final
18 June 2014
The CP188 (NPN) and CP588 (PNP) wafer processes have been discontinuedand replaced with the CP388X and CP788X processes, respectively; and the overall wafer diameter was increased from 4 inch to 5 inch.
PCN149
Final
30 May 2014
The CP117 wafer process has been discontinued and replaced with the CP127 wafer process; the overall wafer diameter is being reduced from 5 inch to 4 inch; and the die pattern is being changed.
PCN148
Final
19 February 2014
Additional assembly site for the SOT-563 case.
PCN147
Final
31 October 2013
The CP207 wafer process has been discontinued and replaced with the CP396V wafer process; the overall wafer diameter is being increased from 4 inch to 5 inch; the overall wafer thickness is being reduced from 8.0 mils to 7.1 mils; and the die size and die pattern are being changed.
PCN146
Final
11 September 2013
The case type is being changed from DO-35 glass case to DO-35A glasscase; no changes are being made to part numbers.
PCN145
Final
11 March 2013
The wafer thickness of CPD04 is being increased from 8.5 mils to 10.5 mils.
PCN144
Final
9 January 2013
Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire for all devices manufactured in the SOD-523 case.
PCN143
Final
12 November 2012
Alternate marking codes have been added to the CSHDD16-40C product line to identify the manufacturing lines for enhanced traceability.
PCN142
Final
22 October 2012
Copper wire has been added as a qualified material for wire bonding inaddition to the currently used gold wire for all devices manufactured the SOT-523 case.
PCN141
Final
18 October 2012
Copper wire has been added as a qualified material for wire bonding inaddition to the currently used gold wire for all devices manufactured the SOT-563 case.
PCN140
Final
13 August 2012
The anode pad size was increased from 66 x 66 mils to 77 x 77 mils for the CPD06 wafer process; the bonding pad area was increased to allow more process latitude in the assembly process.
PCN139
Final
17 May 2012
Minor electrical specification changes to the CMPT3640 PNP satured switching transistor manufactured in the SOT-23 case.
PCN138
Final
17 May 2012
Minor electrical specification changes to specific PNP saturated switching transistors manufactured in the TO-92 case.
PCN137
Final
30 April 2012
The CP716V chip process has been discontinued and replaced by the CP736V wafer process.
PCN136
Final
9 April 2012
Central's ESD packaging is being changed from a blue poly bag to a silver static shielded bag.
PCN135
Final
30 March 2012
The leadframe used to manufacture the TLM322 case has been changed to allow device singularization to be performed by sawing instead of punching.
PCN134
Final
30 March 2012
The leadframe used to manufacture the TLM832D case has been changed toallow device singularization to be performed by sawing instead of punching.
PCN133
Final
6 March 2012
Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire for all devices manufactured the SOT-223 case.
PCN132
Final
1 February 2012
Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire for all devices manufactured the SOT-89 case.
PCN131
Final
8 December 2011
To consolidate the small signal PNP saturated switching product portfolio due to low sales volume, part # CM4209 in the TO-18 metal case has been developed as Central's primary device for low to medium current, PNP, high speed saturated switching applications as a replacement for Part Numbers Affected on attached list.
PCN130
Final
2 November 2011
CBRSDSH5-40 and CBRSDSH5-60 full wave Schottky bridge rectifiers manufactured in the epoxy molded SMDIP case. The CBRSDSH5-40 and CBRSDSH5-60 are being discontinued and replaced with the CBRSDSH2-40 and CBRSDSH2-60.
PCN129
Final
5 October 2011
Chip process CP195, NPN small signal transistors, wafers, and die in chip form.
PCN128
Final
22 September 2011
BAV45, Silicon Picoampere diode manufactured in the TO-18 TWO LEADED metal case. The Matte tin (Sn) plating step has been removed from the manufacturing process.
PCN127
Final
8 June 2011
Chip process CPZ18, Zener Diode discrete semiconductors, wafers, and die in chip form. An overall reduction of the die area and die thickness. The CPZ18 chip process currently measures 13.8 x 13.8 x 7.5 mils and is being replaced by the CPZ28X chip processes which measures 13 x 13 x 5.5 mils.
PCN125
Final
5 April 2011
CPD69 wafer process: 1 Amp, glass passivated, standard recovery rectifiers. Overall wafer thickness has been increased from 8.5 mils to 12.5 mils.
PCN123
Final
1 February 2011
BAW101, dual, isolated, high voltage switching diodes in the SOT-143 epoxy molded case. Alternate marking code has been added to product line.
PCN120
Final
21 December 2010
CEN1180 devices are being manufactured with marking code of P2B or P2A.
PCN119
Final
16 December 2010
Small signal discrete semiconductor wafers. Wafer diameter has been changed from 4" to 5". This change does not affect the physical or electrical characteristics of any device. Gross die quantities per wafer have been increased.
PCN118
Final
19 October 2010
Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. The CP316V chip process currently measures 20 x 20 mils and is being replaced by the CP336V chip process which measures 17.3 x 17.3 mils.
PCN121
Final
1 October 2010
Zener diodes and switching diodes in the DO-35 glass case. Alternate marking format has been added to product line.
PCN117
Final
5 August 2010
All surface mount Current Limiting Diodes (CLDs) manufactured in the SOD-80 case. Devices that are presently packaged in the SOD-80 case are being replaced by their electrical equivalents in the epoxy molded SOD-123FL case.
PCN113
Final
25 June 2010
All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire.
PCN116
Final
11 June 2010
Schottky diodes manufactured in the SOD-123, SOT-23, and SOT-323 packages and Transient Voltage Suppressors manufactured in the SOT-23 package. Tin (Sn) wafer backside metal has been added as a qualified material in addition to the currently used gold (Au) backside metal.
PCN112
Final
31 March 2010
The leadframe used to manufacture the TLM833 case has been changed to allow device singularization to be performed by sawing instead of punching.
PCN110
Final
21 April 2009
Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. The overall wafer diameter is being increased from 4 inch to 5 inch. The overall die thickness is being reduced from 8 mils to 5.9 mils.
PCN109
Final
21 April 2009
An overall reduction of the die area. The CPD41 chip process currently measures 20 x 20 mils and is being replaced by the CPD93V chip process which measures 12.8 x 12.8 mils.
PCN124
Final
10 January 2009
All discrete semiconductor devices manufactured in the SOT-563 package. Alloy42 lead frame has been added as a qualified material for SOT-563 manufacturing in addition to the currently used copper alloy lead frame.
PCN108
Final
3 January 2008
An overall reduction of the die area. The CPZ19 chip process currently measures 17.7 x 17.7 mils and is being replaced by the CPZ28 chip process which measures 13 x 13 mils.
PCN107
Final
29 June 2006
An overall reduction of the die area. The CP192V chip process currently measures 13 x 17 mils and is being replaced by the CP392V chip process which measures 11 x 11 mils. The CP592V chip process currently measures 12 x 20 mils and is being replaced by the CP792V chip process which measures 11 x 11 mils.
PCN106
Final
22 September 2005
5.0W Zener diodes packaged in the AX-5W case replaced by devices packaged in the DO-201 case.
PCN126
Final
13 June 2005
Chip process CP214, NPN RF transistors, wafers, and die in chip form. Die size and die pattern change. The CP214 chip process currently measures 16 x 16 mils and is being replaced by the CP229 chip process which measures 21.7 x 21.7 mils.
PCN105
Final
24 November 2004
Small signal wafer thickness reduced from 9.0 mils to 7.1 mils.
PCN104
Final
24 November 2004
SOD-80 cylindrical case replaced by flat SOD-123 case.
PCN103
Final
20 January 2003
TO-92 -18R lead formed package
PCN102
Final
12 November 2001
Dimension change to all Bridge Rectifiers in DIP package
PCN101
Final
12 November 2001
Dimension change to all Bridge Rectifiers in SMDIP package