Description

Central's new Super Junction devices are silicon N-Channel MOSFETs designed for high-voltage, fast-switching applications. Their unique die structure supports high voltage with comparatively low on-resistance and gate charges. The low switching losses, innately high-reliability die design, and increased power output make them ideal for solar power inverters, electric vehicle inverters, and switch mode power supplies.

Features

• Low on-resistance relative to VDS maximum
• High blocking voltage
• Fast switching speeds

Benefits

• Low switching losses
• Innately high-reliability die design
• Increased power output